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[Библиогр.: с. 38 (9 назв.)]

Optical spectroscopy with nanosecond resolution is used to study the spectral and kinetic characteristic of the optical absorption and luminescence in CaF 2, SrF 2, and BaF 2 crystals under pulsed electron beam excitation. The crystals were simultaneously irradiated by stimulated emission of A 2B 6semiconductors. This additional excitation occurred in the region of the electron component of the self-trapped excitons (STE) absorption. It was stated that STE creation effectiveness in CaF 2, SrF 2, and BaF2 crystals decreased under irradiation with stimulated emission of semiconductors. An evidence for this statement was selective decrease in absorption spectrum of STE and in luminescence spectrum due to their radiative annihilation. Under simultaneous irradiation of CaF 2, SrF 2, and BaF 2 crystals by stimulated emission of semiconductors we observed fast decaying emission at the high-energy edge of emission bands attributed to STE radiative annihilation. The decay time of this emission was shorter than resolution of the measurement technique (< 7 ns). The spectral and kinetic parameters of this fast emission appeared in BaF 2 crystal under pulsed electron excitation and simultaneous irradiation by CdSe stimulated emission were close to those of core-valent electron transitions. Fast emission in the ultra-violet spectral region of CaF 2, SrF 2, and BaF 2 crystals emission spectrum was attributed to radiative electron transitions from higher excited or precursor states.