APA

Kuznetsov P. V., Arefyev (Afef'ev A. K. P., Sokhoreva V. V. & Vorobiev S. A.Decrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation. : .

Chicago

Kuznetsov P V, Arefyev (Afef'ev Arefiev) K P, Sokhoreva V V and Vorobiev S A.Decrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation. : .

Harvard

Kuznetsov P. V., Arefyev (Afef'ev A. K. P., Sokhoreva V. V. and Vorobiev S. A.Decrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation. : .

MLA

Kuznetsov P V, Arefyev (Afef'ev Arefiev) K P, Sokhoreva V V and Vorobiev S A.: . .