APA

Grinyaev S. N., Razzhuvalov A. N., .Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects. : .

Chicago

Grinyaev S N, Razzhuvalov A N, .Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects. : .

Harvard

Grinyaev S. N., Razzhuvalov A. N., .Peculiarities of tunneling current in w-AlN/GaN(0001) two-barrier structures induced by deep-level defects. : .

MLA

Grinyaev S N, Razzhuvalov A N, .: . .