Ac dielectric losses and electrical conductivity of vanadium-borate glass / V. I. Kosintsev [et. al.]

Уровень набора: Soviet Physics Journal = 1965-1992Альтернативный автор-лицо: Kosintsev, V. I., Chemical Engineer, consulting professor, Doctor of technical sciences, 1939-, Victor Ivanovich;Kalygina, V. M.;Gaman, V. I.;Hodebadze, O. E.Язык: английский.Страна: .Резюме или реферат: The conductivity and capacitance of bulk and thin-film metal-glass-metal structures with the glass based on the composition: 32.56% V 2O 5, 46.18% B 2O 3, and 21.26% CaO (mole %) are measured in the frequency interval 2·10 2-2·10 4 Hz and the temperature interval 300-500°K. The frequency-temperature dependences of the real and imaginary parts of the complex dielectric constant calculated from the results of the measurements indicate the presence of the process of relaxation polarization in the glass under investigation. The parameters of the relaxation process are determined. It is proposed that the presence of the relaxation component of the conductivity and losses is due to localization of small-radius polarons (SRP) in the vicinity of positively charged defect centers.Примечания о наличии в документе библиографии/указателя: References: p. 460 (15 tit.).Аудитория: .Тематика: труды учёных ТПУ
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References: p. 460 (15 tit.)

The conductivity and capacitance of bulk and thin-film metal-glass-metal structures with the glass based on the composition: 32.56% V 2O 5, 46.18% B 2O 3, and 21.26% CaO (mole %) are measured in the frequency interval 2·10 2-2·10 4 Hz and the temperature interval 300-500°K. The frequency-temperature dependences of the real and imaginary parts of the complex dielectric constant calculated from the results of the measurements indicate the presence of the process of relaxation polarization in the glass under investigation. The parameters of the relaxation process are determined. It is proposed that the presence of the relaxation component of the conductivity and losses is due to localization of small-radius polarons (SRP) in the vicinity of positively charged defect centers

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