DC electrical conductivity of vanadium-borate glass in weak and strong electric fields / V. I. Kosintsev [et. al.]
Уровень набора: Soviet Physics Journal = 1965-1992Язык: английский.Страна: .Резюме или реферат: The results of an investigation of the temperature and field dependences of the electrical conductivity of vanadium-borate glass with the composition 32.56% V2O5, 46.18% B2O3, and 21.26% CaO (mole %) are discussed. The measurements were carried out on metal-glass-metal “sandwich” structures in the temperature interval 200–500°K with electric field intensities up to 108 V/m. It is shown that the experimental data for T 〈 350°K can be described within the framework of the percolation conductivity theory with a variable jump length, which permits explaining the value of the critical field and the temperature dependence of the slope of the current-voltage characteristics (CVC). It is proposed that for T > 350°K the essential role in forming the CVC is played by small-radius polarons (SMP) localized in the vicinity of positively charged defect centers (“bound” SRP).Примечания о наличии в документе библиографии/указателя: References: p. 465 (23 tit.).Аудитория: .Тематика: труды учёных ТПУReferences: p. 465 (23 tit.)
The results of an investigation of the temperature and field dependences of the electrical conductivity of vanadium-borate glass with the composition 32.56% V2O5, 46.18% B2O3, and 21.26% CaO (mole %) are discussed. The measurements were carried out on metal-glass-metal “sandwich” structures in the temperature interval 200–500°K with electric field intensities up to 108 V/m. It is shown that the experimental data for T 〈 350°K can be described within the framework of the percolation conductivity theory with a variable jump length, which permits explaining the value of the critical field and the temperature dependence of the slope of the current-voltage characteristics (CVC). It is proposed that for T > 350°K the essential role in forming the CVC is played by small-radius polarons (SMP) localized in the vicinity of positively charged defect centers (“bound” SRP)
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