Parametric x radiation from thick crystals / I. Endo [et al.]
Уровень набора: Physical Review E, Scientific JournalЯзык: английский.Страна: .Резюме или реферат: The parametric x radiation from thick Si single crystals with 0.5–5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin’s prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].Примечания о наличии в документе библиографии/указателя: [References: 16 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: 16 tit.]
The parametric x radiation from thick Si single crystals with 0.5–5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin’s prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)]
Для данного заглавия нет комментариев.
Личный кабинет оставить комментарий.