Trapping centers and recombination in pyrolytic boron nitride / Yu. I. Galanov, F. V. Konusov, V. V. Lopatin

Уровень набора: Russian Physics JournalОсновной Автор-лицо: Galanov, Yu. I., mathematician, Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences, 1947-, Yury IvanovichАльтернативный автор-лицо: Konusov, F. V., physicist, Senior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences, 1958-, Fedor Valerievich;Lopatin, V. V., Doctor of physical and mathematical sciences, Professor of Tomsk Polytechnic University (TPU), 1947-, Vladimir VasilyevichЯзык: английский ; резюме, eng.Страна: Россия.Резюме или реферат: The methods of fractional thermoluminescence and thermally stimulated currents are used to study the energy and kinetic parameters of trapping and recombination centers of pyrolytic boron nitride. Three types of monoenergetic traps with energies of 0.55, 0.85, and 1.05 eV are detected against the background of a quasicontinuous distribution of additional levels. A scheme of recombination processes is put together on the basis of measurements of the sign of the carriers, x-ray luminescence, and thermoluminescence spectra. The correlation of the activation energies, frequency factors, and the luminescence and conduction distributions confirmed that an electron-hole mechanism is responsible for the electrotransport with a predominant contribution from holes..Примечания о наличии в документе библиографии/указателя: [Ref.: p. 929 (11 tit.)].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ Ресурсы он-лайн:Щелкните здесь для доступа в онлайн
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[Ref.: p. 929 (11 tit.)]

The methods of fractional thermoluminescence and thermally stimulated currents are used to study the energy and kinetic parameters of trapping and recombination centers of pyrolytic boron nitride. Three types of monoenergetic traps with energies of 0.55, 0.85, and 1.05 eV are detected against the background of a quasicontinuous distribution of additional levels. A scheme of recombination processes is put together on the basis of measurements of the sign of the carriers, x-ray luminescence, and thermoluminescence spectra. The correlation of the activation energies, frequency factors, and the luminescence and conduction distributions confirmed that an electron-hole mechanism is responsible for the electrotransport with a predominant contribution from holes.

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