Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation / A. V. Kabyshev [et al.]
Уровень набора: (RuTPU)RU\TPU\network\3526, Journal of Physics: Conference SeriesЯзык: английский ; резюме, eng.Резюме или реферат: Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2Pa, 300–1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism andthe type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed..Примечания о наличии в документе библиографии/указателя: [References: 15 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | арсенид галлия | пленки | поликристаллический кремний | абляция Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
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[References: 15 tit.]
Electrophysical and photoelectric properties of thin GaAs films deposited on polysilicon by pulse ion ablation using high-power ion beams have been investigated. The predominant charge carriers transfer mechanism in films and the type of dark and photoconductivity have been established. A vacuum annealing effect (10-2Pa, 300–1000 K) on energetic and kinetic characteristics of dark and photoconductivity, the transfer mechanism andthe type of charge carriers have been determined. The most probable causes of changes in the film electric and photoelectric characteristics have been discussed.
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