X-ray production simulation of an electron beam recycled through a betatron's internal target / V. V. Kaplin [et al.]

Уровень набора: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Scientific JournalАльтернативный автор-лицо: Kaplin, V. V., physicist, senior research fellow at Tomsk Polytechnic University, 1947-, Valeriy Viktorovich;Lombardo, L. W.;Mikhalchuk, A. A., mathematician, Associate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences, 1954-, Aleksandr Alexandrovich;Piestrup, M. A.;Uglov, S. R., physicist, senior research fellow at Tomsk Polytechnic University, 1958-, Sergey RomanovichЯзык: английский.Страна: .Резюме или реферат: An analysis of the circulating dynamics of 6 and 35 MeV electron beams in betatron chambers with quasi-transparent internal targets has been done by means of computer simulation. The spatial and angular distributions of the electron trajectories were studied as the electrons made multiple passes through the thin targets. The beam intensities were observed as a function of the number of passes through 0.01, 0.02, 0.05, and 0.1 mm thick silicon targets. The mean number of passes that an electron makes was determined for each combination of target thickness and beam energy. Using the data obtained from the simulation, the spectral and angular distributions of parametric X-radiation have been calculated for electrons recycled through silicon crystals..Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ Ресурсы он-лайн:Щелкните здесь для доступа в онлайн | Щелкните здесь для доступа в онлайн
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An analysis of the circulating dynamics of 6 and 35 MeV electron beams in betatron chambers with quasi-transparent internal targets has been done by means of computer simulation. The spatial and angular distributions of the electron trajectories were studied as the electrons made multiple passes through the thin targets. The beam intensities were observed as a function of the number of passes through 0.01, 0.02, 0.05, and 0.1 mm thick silicon targets. The mean number of passes that an electron makes was determined for each combination of target thickness and beam energy. Using the data obtained from the simulation, the spectral and angular distributions of parametric X-radiation have been calculated for electrons recycled through silicon crystals.

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