Effect in GaAs produced by fast neutrons and protons / E. G. Soboleva, V. V. Litvinenko, T. B. Krit
Язык: английский.Резюме или реферат: It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat..Примечания о наличии в документе библиографии/указателя: [References: 12 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | нейтроны | протоны | барьеры Шоттки Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: 12 tit.]
It has been found that of P-type defects to total defect formation is larger in GaAs samples irradiated with high-energy (65 MeV) protons or fast neutrons. The E4 and E5 defects are annealed out after heat treatment of such samples at a temperature near 200°C; as a result, the shape and intensity of the U band change somewhat.
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