Generating femtosecond pulses in the mid-IR and THz ranges in GaSe1 − x Te xcrystals / D. M. Lubenko [et al.]
Уровень набора: Bulletin of the Russian Academy of Sciences: Physics, Scientific Journal = 2007-Язык: английский ; резюме, eng.Серия: Proceedings Of The International Conference "Luminescence And Laser Physics, 2014"Резюме или реферат: GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8-24 μm and 0.2-3 THz ranges by ≥50%..Примечания о наличии в документе библиографии/указателя: [References: p. 241 (19 tit.)].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: p. 241 (19 tit.)]
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This minimizes optical losses and increases the damage threshold by ≥20%, hardness by 33%, and the efficiency of femtosecond Ti:Sa laser frequency conversion into the 8.8-24 μm and 0.2-3 THz ranges by ≥50%.
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