Measurements of parametric X-rays from relativistic electrons in silicon crystals / Yu. N. Adishchev [et al.]

Уровень набора: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Scientific Journal = 1984-Альтернативный автор-лицо: Adishchev, Yu. N., physicist, Professor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences, 1946-, Yuri Nikolaevich;Didenko, A. N., physicist, Professor of Tomsk Polytechnic University (until 1987), adviser of the Russian Academy of Sciences, Head of the chair of Moscow physical-engineering Institute (since 1988), 1932-, Andrei Nikolaevich;Mun, V. V.;Pleshkov, G. A.;Potylitsyn, A. P., Russian physicist, Professor of the TPU, 1945-, Alexander Petrovich;Tomchakov, V. K.;Uglov, S. R., physicist, senior research fellow at Tomsk Polytechnic University, 1958-, Sergey Romanovich;Vorobiev, S. A., physicist, Senior researcher of Tomsk Polytechnic University, 1944-1992, Sergey AleksandrovichЯзык: английский.Резюме или реферат: Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained..Примечания о наличии в документе библиографии/указателя: [References: p. 55 (19 tit.)].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ Ресурсы он-лайн:Щелкните здесь для доступа в онлайн
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[References: p. 55 (19 tit.)]

Spectral and angular distributions of parametric X-rays have been measured for (200-900) MeV electrons from Si single crystal. The parametric X-rays were observed at an angle θ = 19° relative to the beam of electrons, which intersects the (110) or (111) Si crystallographic planes. The energetic dependence of the PX intensity was also obtained.

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