Deterioration of Watt and Voltage Characteristics of AlGaInP Heterostructures under Irradiation by Fast Neutrons / А. V. Gradoboev, K. N. Orlova
Уровень набора: (RuTPU)RU\TPU\network\2008, IOP Conference Series: Materials Science and EngineeringЯзык: английский.Резюме или реферат: The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures ([lambda]=625 nm)..Примечания о наличии в документе библиографии/указателя: [References: 13 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | гетероструктуры | облучение | быстрые нейтроны | квантовые ямы Ресурсы он-лайн:Щелкните здесь для доступа в онлайн | Щелкните здесь для доступа в онлайнTitle screen
[References: 13 tit.]
The paper presents the results of studying characteristic deterioration of AlGaInP heterostructures with multiple quantum wells. The research was completed for light emitting diodes (emission wavelengths 623 nm and 590 nm) under fast neutron irradiation in passive mode. It has been revealed that the change in emission power and operating current under irradiation is conditioned by band gap and level of electron injection. Here, the change of current flowing mechanism is a distinctive parameter of the boundary between the first and second stages of emission power reduction caused by fast neutron irradiation of AlGaInP heterostructures ([lambda]=625 nm).
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