Creation of excitations and defects in insulating materials by high-current-density electron beams of nanosecond pulse duration / D. I. Vaisburd, K. E. Evdokimov

Уровень набора: Physica Status Solidi (C), Journal = 1961-Основной Автор-лицо: Vaisburd, D. I., российский физик, профессор, директор Центра новых технологий Томского политехнического университета, 1937-2007, David IzrailevichАльтернативный автор-лицо: Evdokimov, K. E., physicist, Senior Lecturer of Tomsk Polytechnic University, Candidate of physical and mathematical sciences, 1976-, Kirill EvgenievichЯзык: английский ; резюме, eng.Страна: .Резюме или реферат: The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The “instantaneous” distribu-tion of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10–14 ? 10–12 s: high-energy conductivity, intraband luminescence, etc. A technique was devel-oped for calculation of the “instantaneous” distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband lumi-nescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and disloca-tions..Примечания о наличии в документе библиографии/указателя: [References: p. 222 (17 tit.)].Тематика: электронный ресурс | труды учёных ТПУ Ресурсы он-лайн:Щелкните здесь для доступа в онлайн
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[References: p. 222 (17 tit.)]

The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The “instantaneous” distribu-tion of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10–14 ? 10–12 s: high-energy conductivity, intraband luminescence, etc. A technique was devel-oped for calculation of the “instantaneous” distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband lumi-nescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and disloca-tions.

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