Planar channelling of relativistic electrons in half-wave silicon crystal and corresponding radiation / Yu. Takabayashi [et al.]
Уровень набора: (RuTPU)RU\TPU\network\3526, Journal of Physics: Conference SeriesЯзык: английский.Серия: Monochromatic X- and Gamma Beams Produced at Electron AcceleratorsРезюме или реферат: New experimental data on planar channeling of 255 MeV electrons in a 0.74 nm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed..Примечания о наличии в документе библиографии/указателя: [References: 27 tit.].Тематика: электронный ресурс | труды учёных ТПУ | кристаллы | кремний | релятивистские электроны | каналирование Ресурсы он-лайн:Щелкните здесь для доступа в онлайн | Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: 27 tit.]
New experimental data on planar channeling of 255 MeV electrons in a 0.74 nm Si Half-Wave Crystal (HWC) obtained at SAGA-LS facility are presented. The computer simulation showed that the angular distribution of electrons after penetration through the HWC revealed the number of unknown before peculiarities is connected with specific electron trajectories in HWC. These specific trajectories lead to specific radiation, the properties of which are analyzed.
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