Integrated microelectromechanical gyroscope under shock loads / T. G. Nesterenko, A. N. Koleda, E. S. Barbin
Уровень набора: (RuTPU)RU\TPU\network\2008, IOP Conference Series: Materials Science and EngineeringЯзык: английский.Страна: .Резюме или реферат: The paper presents a new design of a shock-proof two-axis microelectromechanical gyroscope. Without stoppers, the shock load enables the interaction between the silicon sensor elements. Stoppers were installed in the gyroscope to prevent the contact interaction between electrodes and spring elements with fixed part of the sensor. The contact of stoppers occurs along the plane, thereby preventing the system from serious contact stresses. The shock resistance of the gyroscope is improved by the increase in its eigenfrequency at which the contact interaction does not occur. It is shown that the shock load directed along one axis does not virtually cause the movement of sensing elements along the crosswise axes. Maximum stresses observed in the proposed gyroscope at any loading direction do not exceed the value allowable for silicon..Примечания о наличии в документе библиографии/указателя: [References: 17 tit.].Тематика: электронный ресурс | труды учёных ТПУ | гироскопы | ударные нагрузки | дизайн | контактные напряжения | микросистемы | микроэлектромеханические системы | электроника | акселерометры Ресурсы он-лайн:Щелкните здесь для доступа в онлайн | Щелкните здесь для доступа в онлайнTitle screen
[References: 17 tit.]
The paper presents a new design of a shock-proof two-axis microelectromechanical gyroscope. Without stoppers, the shock load enables the interaction between the silicon sensor elements. Stoppers were installed in the gyroscope to prevent the contact interaction between electrodes and spring elements with fixed part of the sensor. The contact of stoppers occurs along the plane, thereby preventing the system from serious contact stresses. The shock resistance of the gyroscope is improved by the increase in its eigenfrequency at which the contact interaction does not occur. It is shown that the shock load directed along one axis does not virtually cause the movement of sensing elements along the crosswise axes. Maximum stresses observed in the proposed gyroscope at any loading direction do not exceed the value allowable for silicon.
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