Irradiation of sputtered Al-Si-N coatings by pulsed 200 keV C+ion beam / G. E. Remnev [et al.]

Уровень набора: VacuumАльтернативный автор-лицо: Remnev, G. E., physicist, Professor of Tomsk Polytechnic University, Doctor of technical sciences, 1948-, Gennady Efimovich;Tarbokov, V. A., specialist in the field of material science, Leading engineer of Tomsk Polytechnic University, Candidate of technical sciences, 1969-, Vladislav Aleksandrovich;Pavlov, S. K., physicist, Engineer of Tomsk Polytechnic University, 1990-, Sergey Konstantinovich;Konusov, F. V., physicist, Senior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences, 1958-, Fedor Valerievich;Zenkin, S. P., physicist, Researcher of Tomsk Polytechnic University, 1988-, Sergey Petrovich;Musil, Y., physicist, Leading researcher of Tomsk Polytechnic University, Doctor of physical and mathematical sciences, 1934-, YindrikhКоллективный автор (вторичный): Национальный исследовательский Томский политехнический университет, Исследовательская школа физики высокоэнергетических процессов, (2017- )Язык: английский.Резюме или реферат: This paper reports on the effect of the irradiation of Al-Si-N coatings by an intense pulsed ion beam. The Al-Si-N coating was deposited on a steel substrate by a reactive magnetron sputtering. The Al-Si-N coating with a high silicon content (30?at.%) was irradiated by a high-intense pulsed C+ ion beam. It was shown that metastable growth defects (GDs) created in the Al-Si-N coating during deposition can be healed up by its post-deposition irradiation using several pulses (1 and 10) of C+ ions with energy Ei?=?200?keV, ion current density is?=?7 A/cm2, pulse duration tp?=?110 ns and radiation dose 2?MGy. The reduction in deposition-induced GD density results in an increased transmittance of the Al-Si-N coatings..Примечания о наличии в документе библиографии/указателя: [References: 24 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | излучения | прозрачность | магнетронное распыление Ресурсы он-лайн:Щелкните здесь для доступа в онлайн
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[References: 24 tit.]

This paper reports on the effect of the irradiation of Al-Si-N coatings by an intense pulsed ion beam. The Al-Si-N coating was deposited on a steel substrate by a reactive magnetron sputtering. The Al-Si-N coating with a high silicon content (30?at.%) was irradiated by a high-intense pulsed C+ ion beam. It was shown that metastable growth defects (GDs) created in the Al-Si-N coating during deposition can be healed up by its post-deposition irradiation using several pulses (1 and 10) of C+ ions with energy Ei?=?200?keV, ion current density is?=?7 A/cm2, pulse duration tp?=?110 ns and radiation dose 2?MGy. The reduction in deposition-induced GD density results in an increased transmittance of the Al-Si-N coatings.

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