Bent crystal channeling of 255 MeV electrons / Y. Takabayashi, Yu. L. Pivovarov, T. A. Tukhfatullin
Уровень набора: Physics Letters AЯзык: английский.Страна: .Резюме или реферат: Charged particles channeled in a bent crystal plane are known to be deflected along the bent plane. Such studies have mainly been performed for high-energy positively-charged particles such as protons, and recently for electrons with energies from 855 MeV to 20.35 GeV. In this work, we present experimental results on the bent crystal channeling of electrons for a lower energy region (255 MeV), where the multiple scattering effect in a crystal is expected to be more dominant. Angular distributions of electrons transmitted through a bent Si crystal have been measured, which are in good agreement with the simulation results..Примечания о наличии в документе библиографии/указателя: References: p. 156 (27 tit.).Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | кристаллы | каналы | изгиб | отклонения | лучи Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
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References: p. 156 (27 tit.)
Charged particles channeled in a bent crystal plane are known to be deflected along the bent plane. Such studies have mainly been performed for high-energy positively-charged particles such as protons, and recently for electrons with energies from 855 MeV to 20.35 GeV. In this work, we present experimental results on the bent crystal channeling of electrons for a lower energy region (255 MeV), where the multiple scattering effect in a crystal is expected to be more dominant. Angular distributions of electrons transmitted through a bent Si crystal have been measured, which are in good agreement with the simulation results.
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