Nuclear Doping of Single-Crystal Silicon in the IRT-T Pool Type Research Nuclear Reactor / V. A. Varlachev [et al.]

Уровень набора: Actual Problems of Electronic Instrument Engineering (APEIE-2018), Proceedings of 14th International Scientific-Technical Conference, Novosibirsk, October 2-6, 2018, in 8 vol. / Novosibirsk State Technical University = 2018Альтернативный автор-лицо: Varlachev, V. A., physicist, specialist in the field of nuclear physics, Head of the laboratory of Tomsk Polytechnic University, Candidate of technical sciences, 1948-, Valery Aleksandrovich;Emets, E. G., physicist, specialist in the field of nuclear physics, Engineer-designer of Tomsk Polytechnic University, 1984-, Evgeny Gennadievich;Lebedev, I. I., specialist in the field of power engineering, engineer of Tomsk Polytechnic University, 1990-, Ivan Igorevich;Zolotykh, D. E., Daniil EvgenjevichКоллективный автор (вторичный): Национальный исследовательский Томский политехнический университет (ТПУ), Физико-технический институт (ФТИ), Лаборатория № 33 ядерного реактора;Национальный исследовательский Томский политехнический университет, Инженерная школа ядерных технологий, Отделение ядерно-топливного циклаЯзык: английский.Резюме или реферат: In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed..Примечания о наличии в документе библиографии/указателя: [References: p. 187 (5 tit.)].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | single-crystal silicon | reactor | neutrons | integral flux | nuclear doping | монокристаллический кремний | реакторы | нейроны | интегральные показатели Ресурсы он-лайн:Щелкните здесь для доступа в онлайн
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[References: p. 187 (5 tit.)]

In this paper, a mathematical model for the formation of a neutron field for nuclear doping of monocrystalline silicon ingots with a diameter of up to 205 mm has been developed. It is shown that the use of a smoothing filter makes it possible to achieve high axial homogeneity of the neutron field along the height of the silicon ingot. The calculated spectral characteristics of the neutron field in the irradiation zone of silicon ingots are obtained. An algorithm for the movement of a container with ingots during its irradiation in a vertical experimental channel of large diameter has been developed.

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