Tribological and mechanical properties of diamond films synthesized with high methane concentration / A. V. Gaydaychuk, S. A. Linnik
Уровень набора: International Journal of Refractory Metals and Hard MaterialsЯзык: английский.Резюме или реферат: Ultrananocrystalline diamond films are synthesized on Si substrate by HFCVD method with a high methane concentration (up to 23.1 vol%) in the gas mixture. The morphology and structural properties of the grown diamond films are analyzed using scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction and Raman spectroscopy. It is shown that the surface roughness, crystallite size, hardness and friction coefficient of the obtained films decrease with increasing methane content in the gas mixture. The relationship between the CoF and the wear rate of diamond films is also analyzed. It is found that by reducing the CoF from 0.11 to 0.067, wear rate of the obtained films increases from 0.08 to 7.11 × 10−10 m3 N−1 m−1..Примечания о наличии в документе библиографии/указателя: [References: 40 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | ultrananocrystalline diamond film | CoF | wear rate | HFCVD | алмазные пленки Ресурсы он-лайн:Щелкните здесь для доступа в онлайнTitle screen
[References: 40 tit.]
Ultrananocrystalline diamond films are synthesized on Si substrate by HFCVD method with a high methane concentration (up to 23.1 vol%) in the gas mixture. The morphology and structural properties of the grown diamond films are analyzed using scanning electron microscope (SEM), atomic force microscope (AFM), X-ray diffraction and Raman spectroscopy. It is shown that the surface roughness, crystallite size, hardness and friction coefficient of the obtained films decrease with increasing methane content in the gas mixture. The relationship between the CoF and the wear rate of diamond films is also analyzed. It is found that by reducing the CoF from 0.11 to 0.067, wear rate of the obtained films increases from 0.08 to 7.11 × 10−10 m3 N−1 m−1.
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