Self-Aligned Multilayer Dielectric “DummyGate” Technology for L–, S– and X–Band GaAsMMICs Fabrication / E. V. Anishchenko, V. S. Arykov, A. M. Gavrilova [et al.]
Язык: английский.Резюме или реферат: This paper demonstrates the main aspects of thetechnology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayerdielectric “dummy gate” used for fabrication of the metal–semiconductor field effect transistor with 0.5 microns gatelength and ion implantation for channel, drain and sourceregions formation is described. Methods of front- and backside processing and specifications of control MMICs such asL–, S– and X–band switches, attenuators and phase-shiftersare described.Примечания о наличии в документе библиографии/указателя: [References: p. 40 (3 tit.)].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | gallium arsenide | ion implantation | dummy gate | MESFET | AESA | ионная имплантация Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: p. 40 (3 tit.)]
This paper demonstrates the main aspects of thetechnology for GaAs microwave monolithic integrated circuits fabrication. The self-aligned technology with multilayerdielectric “dummy gate” used for fabrication of the metal–semiconductor field effect transistor with 0.5 microns gatelength and ion implantation for channel, drain and sourceregions formation is described. Methods of front- and backside processing and specifications of control MMICs such asL–, S– and X–band switches, attenuators and phase-shiftersare described
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