Radio frequency bias enhanced nucleation of CVD diamond / S. A. Linnik, A. V. Gaydaychuk, A. S. Mitulinsky, S. P. Zenkin
Уровень набора: Materials LettersЯзык: английский.Страна: .Резюме или реферат: In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates..Примечания о наличии в документе библиографии/указателя: [References: 23 tit.].Аудитория: .Тематика: электронный ресурс | труды учёных ТПУ | CVD diamond | bias-enhanced nucleation | ion bombardment | radio frequency bias Ресурсы он-лайн:Щелкните здесь для доступа в онлайнНет реальных экземпляров для этой записи
Title screen
[References: 23 tit.]
In this work, a new technique of bias enhanced nucleation of diamond on dielectric and weakly conductive substrates by application of a radio frequency (RF) 13.56 MHz bias on them was developed. The effect of RF discharge power, methane concentration, and duration of exposure on the nucleation density was studied. Comparison of an RF bias with a DC bias was made. Comparative data of a diamond nucleation on silicon and sapphire substrates are presented. This technique has a great potential to solve the tasks of diamond heteroepitaxy, as well as to achieve a high density of nucleation on dielectric substrates.
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