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Pulsed ion beam formation of highly doped GaAs layers / R. M. Bayazitov [et al.]Уровень набора: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Scientific Journal = 1984-Доступность: :

2.
Formation of heavily doped semiconductor layers by pulsed ion beam treatmen / R. M. Bayazitov [et al.]Уровень набора: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Scientific Journal = 1984-Доступность: :