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_aHigh-Current Subnanosecond Switching by Semiconductor Devices for Pulsed Power Applications _fS. N. Rukin [et al.] |
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| 320 | _aReferences: p. 239 (6 tit.) | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\book\23311 _t1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials _oproceedings, Tomsk, Russia, 24-29 September 2000 _f1-st International Congress on Radiation Physics, High Current Electronics, and Modification of Materials ; Tomsk Polytechnic University (TPU) _d2000 |
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_0(RuTPU)RU\TPU\book\23312 _tVol. 2: 12-th Simposium on High Current Electronics _fed. by G. Mesyats, B. Kovalchuk, G. Remnev _vP. 235-239 _d2000 _p544 p. |
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| 610 | 1 | _aтруды учёных ТПУ | |
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_aRukin _bS. N. |
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_aDarznek _bS. A. |
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_aLyubutin _bS. K. |
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_aMesyats _bG. A. _crussian physicist _cacademican, vice-president of RAS _cgraduate of Tomsk Polytechnic Institute _f1936- _gGennady Andreyevich _2stltpush _3(RuTPU)RU\TPU\pers\28088 _4070 |
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_aSlovikovskii _bB. G. |
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| 701 | 1 |
_aTsyranov _bS. N. |
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_aRU _b63413507 _c20110815 |
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