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035 _a(RuTPU)RU\TPU\book\247324
035 _aRU\TPU\book\198677
090 _a226931
100 _a20121128d2004 k y0engy50 ba
101 0 _aeng
102 _aRU
200 1 _aDielectric properties of boron nitride after high temperature implantation with ions
_fA. V. Kabyshev [et al.]
320 _aReferences: 9 tit.
461 1 _0(RuTPU)RU\TPU\book\73635
_tKorus 2004
_othe 8th Korea-Russia International Symposium on Science and Technology, June 26 - July 3, 2004, At Tomsk Politechnic University, Russia
_oproceedings
_fNovosibirsk State Technical University; Tomsk Polytechnic University
_d2004-
463 1 _0(RuTPU)RU\TPU\book\73150
_tVol. 3
_vP. 113-116
_d2004
_p365 p.
610 1 _aтруды учёных ТПУ
701 1 _aKabyshev
_bA. V.
_cspecialist in the field of electric power engineering
_cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
_f1958-
_gAlexander Vasilievich
_2stltpush
_3(RuTPU)RU\TPU\pers\32572
701 1 _aKonusov
_bF. V.
_cphysicist
_cSenior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences
_f1958-
_gFedor Valerievich
_2stltpush
_3(RuTPU)RU\TPU\pers\32570
701 1 _aLopatin
_bV. V.
_cDoctor of physical and mathematical sciences
_cProfessor of Tomsk Polytechnic University (TPU)
_f1947-
_gVladimir Vasilyevich
_2stltpush
_3(RuTPU)RU\TPU\pers\30091
701 1 _aKrivosheeva
_bN. V.
801 1 _aRU
_b63413507
_c20090127
_gPSBO
801 2 _aRU
_b63413507
_c20140915
_gPSBO
942 _cBK