| 000 | 03153nla2a2200481 4500 | ||
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| 001 | 232027 | ||
| 005 | 20231029210118.0 | ||
| 035 | _a(RuTPU)RU\TPU\book\253057 | ||
| 035 | _aRU\TPU\book\252999 | ||
| 090 | _a232027 | ||
| 100 | _a20130207d2004 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aRU | ||
| 105 | _ay z 100zy | ||
| 135 | _adrnn ---uucaa | ||
| 200 | 1 |
_aHigh-Frequency Short-Pulsed Metal Plasma-Immersion Ion Implantation Using Filtered DC Vacuum-Arc Plasma (Part II) _bElectronic resource _fA. I. Ryabchikov, I. A. Ryabchikov, I. B. Stepanov |
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| 203 |
_aText _celectronic |
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| 225 | 1 | _aFundamentals of modification processes | |
| 230 | _aElectronic text data (1 file : 192 Kb) | ||
| 300 | _aTitle from the title-page. | ||
| 320 | _a[References: p. 141 (27 tit.)] | ||
| 330 | _aAn innovative concept in the development of advanced coating deposition and ion implantation method including an application of filtered DC metal plasma source and high-frequency short-pulsed negative bias voltage with a duty factor in the range 10÷99% are considered. The regularities of ion implantation and metal plasma deposition for metal samples are theoretically and experimentally investigated. Experimentally has been shown that metal plasma based ion implantation as well as high-concentration metal plasma ion implantation with compensation of ion surface sputtering by metal plasma deposition as well as ion-assisted coating deposition can be realized by variation of bias potential ranging from 0 V to 4 kV, pulse repetition rate smoothly adjusted in the range (2÷4.4)⋅105 pps and pulse duration ranging from 0.5 to 2 μs. Special features of the material treatment method depending on plasma concentration, pulse repetition rate and duty factor has been examined. | ||
| 333 | _aРежим доступа: из корпоративной сети ТПУ | ||
| 336 | _aText files | ||
| 337 | _aAdobe Reader | ||
| 463 | 1 |
_0(RuTPU)RU\TPU\book\75459 _t7 International conference on modification of materials with particle beams and plasma flows _oTomsk, Russia, 25-29 July 2004 _fedited by S. Korovin, A. Ryabchikov _v[P. 138-141] _d2004 _p1 Multimedia CD-ROM |
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| 610 | 1 | _aфизика | |
| 610 | 1 | _aплазма | |
| 610 | 1 | _aметаллы | |
| 610 | 1 | _aосаждение | |
| 610 | 1 | _aионная имплантация | |
| 610 | 1 | _aметаллическая плазма | |
| 610 | 1 | _aионное распыление | |
| 610 | 1 | _aимпульсы | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aэлектронный ресурс | |
| 700 | 1 |
_aRyabchikov _bA. I. _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cphysicist _f1950- _gAleksandr Ilyich _2stltpush _3(RuTPU)RU\TPU\pers\30912 |
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| 701 | 1 |
_aRyabchikov _bI. A. |
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| 701 | 1 |
_aStepanov _bI. B. _cphysicist _cHead of the laboratory of Tomsk Polytechnic University, Doctor of technical sciences _f1968- _gIgor Borisovich _2stltpush _3(RuTPU)RU\TPU\pers\34218 |
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| 801 | 1 |
_aRU _b63413507 _c20120118 |
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| 801 | 2 |
_aRU _b63413507 _c20161229 _gRCR |
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| 856 | 4 | _uhttp://www.lib.tpu.ru/fulltext2/c/2004/C13/036.pdf | |
| 942 | _cCF | ||