| 000 | 02550naa2a2200277 4500 | ||
|---|---|---|---|
| 001 | 235310 | ||
| 005 | 20231029210552.0 | ||
| 035 | _a(RuTPU)RU\TPU\book\256446 | ||
| 035 | _aRU\TPU\book\256443 | ||
| 090 | _a235310 | ||
| 100 | _a20130408d2001 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aRU | ||
| 200 | 1 |
_aSimulation of spark channel formation for electrical discharge technology _fA. Cheglokov [et al.] |
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| 320 | _aReferences: p. 228 (5 tit.) | ||
| 330 | _aThe impulse breakdown of dielectrics is a result of propagation of conducting discharge channels in insulators. The electric field, charge, and energy dynamics within the discharge channels and dielectric material govern the channel growth. In this paper the physical-mathematical model of the discharge channel propagation is presented. The model describes the self-consistent dynamics of temperature, electric field, charge density, and phase transition of the dielectric material to highly conducting state. The discharge channel propagation is associated with the growth of the highly conducting region in the insulator. For computer simulation the model has been realized as a three dimensional numerical algorithm on a cubic lattice. The dynamics of the electric field, charge density, and temperature are calculated on the base of finite-difference approximations of the Poisson's equation, continuity equation, and energy conservation law. The phase transition occurs when the temperature of the dielectric exceeds a critical value. The results of computer simulation of the conducting channel formation in non-homogeneous dielectrics in needle-plane electrode geometry under dc voltage are presented. | ||
| 461 | 0 |
_0(RuTPU)RU\TPU\book\39044 _tKorus 2001 _oThe 5th Korea-Russia International Symposium on Science and Technology, June 26 - July 3, 2001, Tomsk _oproceedings _fTomsk Polytechnic University (TPU) ; KORUS _d2001- |
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| 463 | 0 |
_0(RuTPU)RU\TPU\book\31152 _tVol. 1 _vP. 224-228 _d2001 _p392 p. |
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| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aCheglokov _bA. |
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| 701 | 1 |
_aNoskov _bM. |
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| 701 | 1 |
_aLopatin _bV. V. _cDoctor of physical and mathematical sciences _cProfessor of Tomsk Polytechnic University (TPU) _f1947- _gVladimir Vasilyevich _2stltpush _3(RuTPU)RU\TPU\pers\30091 _4070 |
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| 701 | 1 |
_aShapovalov _bA. V. _cmathematician _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1949- _gAleksandr Vasilyevich _2stltpush _3(RuTPU)RU\TPU\pers\31734 |
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| 801 | 1 |
_aRU _b63413507 _c20130408 |
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| 801 | 2 |
_aRU _b63413507 _c20150321 _gRCR |
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| 942 | _cBK | ||