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| 001 | 276127 | ||
| 005 | 20231029215858.0 | ||
| 010 | _a3540120912 | ||
| 035 | _a(RuTPU)RU\TPU\book\299385 | ||
| 090 | _a276127 | ||
| 100 | _a20141119d1983 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aDE | ||
| 105 | _aa z 001zy | ||
| 200 | 1 |
_aNarrow-Gap Semiconductors _fR. Dornhaus, G. Nimtz, B. Schlicht |
|
| 210 |
_aBerlin _aHeidelberg _aNew York _aTokyo _cSpringer-Verlag _d1983 |
||
| 215 |
_a309 p. _cil. |
||
| 225 | 1 |
_aSpringer Tracts in Modern Physics _vVol. 98 |
|
| 320 | _aSubject Index: p. 305-309 | ||
| 606 | 1 |
_aПолупроводники _2stltpush _3(RuTPU)RU\TPU\subj\50553 |
|
| 610 | 1 | _aэлектрофизика | |
| 610 | 1 | _aэлектрофизические исследования | |
| 610 | 1 | _aсвойства | |
| 610 | 1 | _aанглийский язык | |
| 675 |
_a537.311.322 _v3 |
||
| 700 | 1 |
_aDornhaus _bR. |
|
| 701 | 1 |
_aNimtz _bG. |
|
| 701 | 1 |
_aSchlicht _bB. |
|
| 801 | 1 |
_aRU _b63413507 _c20141119 |
|
| 801 | 2 |
_aRU _b63413507 _c20170131 _gRCR |
|
| 942 | _cBK | ||