000 | 02955naa2a2200493 4500 | ||
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001 | 580795 | ||
005 | 20231030032741.0 | ||
035 | _a(RuTPU)RU\TPU\prd\280668 | ||
035 | _aRU\TPU\prd\280667 | ||
090 | _a580795 | ||
100 | _a20181022a2018 k y0rusy50 ba | ||
101 | 0 | _aeng | |
102 | _aRU | ||
135 | _adrcn ---uucaa | ||
181 | 0 | _ai | |
182 | 0 | _ab | |
200 | 1 |
_aCleaning and sputtering using planar acoustoplasma magnetron _fA. S. Abrahamyan, A. H. Mkrtchyan, V. V. Nalbandyan [et al.] |
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203 |
_aText _celectronic |
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215 | _a1 файл(5152 Кб) | ||
230 | _aЭлектронные текстовые данные (1 файл: 5152 Кб) | ||
300 | _aTitle screen | ||
320 | _a[References: p. 13 (17 tit.)] | ||
330 | _aThe paper describes the obtained experimental results for a planar acoustoplasma magnetron. The small radius of the anode loopallows focusing and accelerating the ionic component of the sprayed material.Argon was used as a buffer gas. The characteristics of the magnetron in case of direct current supply and in acoustoplasma mode(AP) (with modulated current containing constant and variable components) are compared. The sputtering speed in AP modeincreases. For the copper cathode, the gas pressure made < 1 Pa and current density of the order of 100 mA/cm2with increasingdistance from the anode to the deposited substrate from 2 to 4 cm in case of DC supply, the deposition speed drops 3.3 times (from17 to 5 nm/s), in the acoustoplasma mode – 2 times (from 13 to 6.4 nm/s).For the anode-substrate distance 4 cm, the gain in the deposition speed in the AP mode, compared with DC is 1.2–1.5 times. Thedependences of ion and electron currents on the substrate for different discharge parameters were measured. The study was basedon a scheme with two potential grids with fixed and variable potentials. The possibility of forming an annular vapor-plasma flowof fast particles is shown. | ||
461 | 1 |
_0(RuTPU)RU\TPU\prd\247369 _x2405-6537 _tResource-Efficient Technologies _oelectronic scientific journal _fNational Research Tomsk Polytechnic University (TPU) _d2015- |
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463 | 1 |
_0(RuTPU)RU\TPU\prd\280666 _tNo 3 _v[P. 7-13] _d2018 |
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610 | 1 | _aтруды учёных ТПУ | |
610 | 1 | _aэлектронный ресурс | |
610 | 1 | _aраспыление | |
610 | 1 | _aмагнетроны | |
610 | 1 | _aплазма | |
610 | 1 | _aтехнологии | |
701 | 1 |
_aAbrahamyan _bA. S. |
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701 | 1 |
_aMkrtchyan _bA. H. |
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701 | 1 |
_aNalbandyan _bV. V. |
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701 | 1 |
_aHovhannisyan _bN. T. |
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701 | 1 |
_aChilingaryan _bR. Yu. |
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701 | 1 |
_aHakobyan _bA. S. |
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701 | 1 |
_aMossoyan _bP. H. |
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801 | 1 |
_aRU _b63413507 _c20090623 _gPSBO |
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801 | 2 |
_aRU _b63413507 _c20220418 _gPSBO |
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856 | 4 | _uhttp://www.ojs.tpu.ru/index.php/res-eff/article/view/197/183 | |
856 | 4 | _uhttp://earchive.tpu.ru/handle/11683/51444 | |
856 | 4 | _uhttps://doi.org/10.18799/24056537/2018/3/197 | |
942 | _cBK |