000 02955naa2a2200493 4500
001 580795
005 20231030032741.0
035 _a(RuTPU)RU\TPU\prd\280668
035 _aRU\TPU\prd\280667
090 _a580795
100 _a20181022a2018 k y0rusy50 ba
101 0 _aeng
102 _aRU
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aCleaning and sputtering using planar acoustoplasma magnetron
_fA. S. Abrahamyan, A. H. Mkrtchyan, V. V. Nalbandyan [et al.]
203 _aText
_celectronic
215 _a1 файл(5152 Кб)
230 _aЭлектронные текстовые данные (1 файл: 5152 Кб)
300 _aTitle screen
320 _a[References: p. 13 (17 tit.)]
330 _aThe paper describes the obtained experimental results for a planar acoustoplasma magnetron. The small radius of the anode loopallows focusing and accelerating the ionic component of the sprayed material.Argon was used as a buffer gas. The characteristics of the magnetron in case of direct current supply and in acoustoplasma mode(AP) (with modulated current containing constant and variable components) are compared. The sputtering speed in AP modeincreases. For the copper cathode, the gas pressure made < 1 Pa and current density of the order of 100 mA/cm2with increasingdistance from the anode to the deposited substrate from 2 to 4 cm in case of DC supply, the deposition speed drops 3.3 times (from17 to 5 nm/s), in the acoustoplasma mode – 2 times (from 13 to 6.4 nm/s).For the anode-substrate distance 4 cm, the gain in the deposition speed in the AP mode, compared with DC is 1.2–1.5 times. Thedependences of ion and electron currents on the substrate for different discharge parameters were measured. The study was basedon a scheme with two potential grids with fixed and variable potentials. The possibility of forming an annular vapor-plasma flowof fast particles is shown.
461 1 _0(RuTPU)RU\TPU\prd\247369
_x2405-6537
_tResource-Efficient Technologies
_oelectronic scientific journal
_fNational Research Tomsk Polytechnic University (TPU)
_d2015-
463 1 _0(RuTPU)RU\TPU\prd\280666
_tNo 3
_v[P. 7-13]
_d2018
610 1 _aтруды учёных ТПУ
610 1 _aэлектронный ресурс
610 1 _aраспыление
610 1 _aмагнетроны
610 1 _aплазма
610 1 _aтехнологии
701 1 _aAbrahamyan
_bA. S.
701 1 _aMkrtchyan
_bA. H.
701 1 _aNalbandyan
_bV. V.
701 1 _aHovhannisyan
_bN. T.
701 1 _aChilingaryan
_bR. Yu.
701 1 _aHakobyan
_bA. S.
701 1 _aMossoyan
_bP. H.
801 1 _aRU
_b63413507
_c20090623
_gPSBO
801 2 _aRU
_b63413507
_c20220418
_gPSBO
856 4 _uhttp://www.ojs.tpu.ru/index.php/res-eff/article/view/197/183
856 4 _uhttp://earchive.tpu.ru/handle/11683/51444
856 4 _uhttps://doi.org/10.18799/24056537/2018/3/197
942 _cBK