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001 596747
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035 _a(RuTPU)RU\TPU\tpu\19770
090 _a596747
100 _a20110818d2002 k y0engy50 ba
101 0 _aeng
102 _aFR
200 1 _aA simplified model of the formation of a deep potential well in a vacuum diode
_fS. A. Barengolts [et al.]
333 _aВ фонде НТБ ТПУ отсутствует
463 _tProceedings of the 20th International Symposium on Discharges and Electrical Insulation in Vacuum, Tours, july 1-5, 2002
_vP. 467-470
_d2002
610 1 _aтруды учёных ТПУ
701 1 _aBarengolts
_bS. A.
701 1 _aKazarinov
_bN. Yu.
701 1 _aMesyats
_bG. A.
_crussian physicist
_cacademican, vice-president of RAS
_cgraduate of Tomsk Polytechnic Institute
_f1936-
_gGennady Andreyevich
_xTPU
_2stltpush
_3(RuTPU)RU\TPU\pers\28088
_4070
701 1 _aPerelshtein
_bE. A.
701 1 _aShevtsov
_bV. F.
801 1 _aRU
_b63413507
_c20110818
942 _cBK