000 00964nam1a2200253 4500
001 596753
005 20231030033709.0
035 _a(RuTPU)RU\TPU\tpu\19777
090 _a596753
100 _a20110823a2003 k y0engy50 ba
101 0 _aeng
102 _aUS
200 1 _aA simplified model of the formation of a deep potential well in a vacuum diode
_fS. A. Barengolts [et al.]
333 _aВ фонде НТБ ТПУ отсутствует
461 _tIEEE Transaction on Plasma Science
463 _tVol. 31, iss. 5 pt. 1
_vP. 847-851
_d2003
610 1 _aтруды учёных ТПУ
701 1 _aBarengolts
_bS. A.
701 1 _aKazarinov
_bN. Yu.
701 1 _aMesyats
_bG. A.
_crussian physicist
_cacademican, vice-president of RAS
_cgraduate of Tomsk Polytechnic Institute
_f1936-
_gGennady Andreyevich
_xTPU
_2stltpush
_3(RuTPU)RU\TPU\pers\28088
_4070
701 1 _aPerelstein
_bE. A.
701 1 _aShevtsov
_bV. F.
801 1 _aRU
_b63413507
_c20110823
942 _cBK