000 00939nam1a2200253 4500
001 596787
005 20231030033710.0
035 _a(RuTPU)RU\TPU\tpu\19826
090 _a596787
100 _a20110825a2005 k y0engy50 ba
101 1 _aeng
102 _aRU
200 1 _aModeling the formation of a deep potential well in a vacuum diode
_fS. A. Barengol'ts [et al.]
333 _aВ фонде НТБ ТПУ отсутствует
461 _tTechnical Physics Letters
463 _tVol. 31, № 2
_vP. 164-166
_d2005
610 1 _aтруды учёных ТПУ
701 1 _aBarengol'ts
_bS. A.
701 1 _aKazarinov
_bN. Yu.
701 1 _aMesyats
_bG. A.
_crussian physicist
_cacademican, vice-president of RAS
_cgraduate of Tomsk Polytechnic Institute
_f1936-
_gGennady Andreyevich
_xTPU
_2stltpush
_3(RuTPU)RU\TPU\pers\28088
_4070
701 1 _aPerel'shtein
_bE. A.
701 1 _aShevtsov
_bV. F.
801 1 _aRU
_b63413507
_c20110825
942 _cBK