000 | 01224nam1a2200277 4500 | ||
---|---|---|---|
001 | 598357 | ||
005 | 20231030033754.0 | ||
035 | _a(RuTPU)RU\TPU\tpu\21988 | ||
035 | _aRU\TPU\tpu\21987 | ||
090 | _a598357 | ||
100 | _a20121109a1988 k y0engy50 ba | ||
101 | 0 | _aeng | |
102 | _aUS | ||
200 | 1 |
_aDecrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation _fP. V. Kuznetsov [et al.] |
|
320 | _aReferences: 2 tit. | ||
333 | _aВ фонде НТБ ТПУ отсутствует | ||
461 |
_tRadiation effects express _d1987-1989 |
||
463 |
_tVol. 1, iss. 6 _vP. 259-262 _d1988 |
||
610 | 1 | _aтруды учёных ТПУ | |
701 | 1 |
_aKuznetsov _bP. V. |
|
701 | 1 |
_aArefyev (Afef'ev, Arefiev) _bK. P. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _cA Corresponding Member of Russian Academy of Natural Sciences (RANS/RAEN) _f1947- _gKonstantin Petrovich _xTPU _2stltpush _3(RuTPU)RU\TPU\pers\29714 _4070 |
|
701 | 1 |
_aSokhoreva _bV. V. |
|
701 | 1 |
_aVorobiev _bS. A. |
|
801 | 1 |
_aRU _b63413507 _c20121109 |
|
801 | 2 |
_aRU _b63413507 _c20121109 _gRCR |
|
942 | _cBK |