000 01224nam1a2200277 4500
001 598357
005 20231030033754.0
035 _a(RuTPU)RU\TPU\tpu\21988
035 _aRU\TPU\tpu\21987
090 _a598357
100 _a20121109a1988 k y0engy50 ba
101 0 _aeng
102 _aUS
200 1 _aDecrease of imperfection of GaAs epitaxial structures improvement of electrophysical and spectrometrical characteristics of silicon detectors under positron irradiation
_fP. V. Kuznetsov [et al.]
320 _aReferences: 2 tit.
333 _aВ фонде НТБ ТПУ отсутствует
461 _tRadiation effects express
_d1987-1989
463 _tVol. 1, iss. 6
_vP. 259-262
_d1988
610 1 _aтруды учёных ТПУ
701 1 _aKuznetsov
_bP. V.
701 1 _aArefyev (Afef'ev, Arefiev)
_bK. P.
_cphysicist
_cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
_cA Corresponding Member of Russian Academy of Natural Sciences (RANS/RAEN)
_f1947-
_gKonstantin Petrovich
_xTPU
_2stltpush
_3(RuTPU)RU\TPU\pers\29714
_4070
701 1 _aSokhoreva
_bV. V.
701 1 _aVorobiev
_bS. A.
801 1 _aRU
_b63413507
_c20121109
801 2 _aRU
_b63413507
_c20121109
_gRCR
942 _cBK