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035 _a(RuTPU)RU\TPU\tpu\23614
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090 _a599529
100 _a20130913a1981 k y0engy50 ba
101 1 _aeng
102 _aUS
200 1 _aElectrical properties of mim structures based on vanadium-borate glass
_fV. M. Kalygina [et. el.]
320 _aReferences: p. 265-266 (15 tit.)
330 _aThe results are given of investigation of the dc and ac electrical properties of thin-film metal-insulator-metal structures of capacitor type based on glass of the composition 35% B2O3-15% CaO-20% V2O4-30% V2O5 (wt.%). The glass films were deposited by an explosive method on a glassceramic substrate at t°=80°C. Upper and lower Nichrome electrodes were obtained by thermal evaporation. The influence of annealing on the conductivity and current-voltage characteristics of such structures was investigated. It was found that the current-voltage characteristics before and after annealing are determined in a wide range of temperatures and constant electric fields by contact barriers on the metal-glass-film interface. The ac behavior of the samples at f >102 Hz is due to the bulk properties of the glass film
333 _aВ фонде НТБ ТПУ отсутствует
461 _tSoviet Physics Journal
_d1965-1992
463 _tVol. 24, № 3
_vP. 262-266
_d1981
610 1 _aтруды учёных ТПУ
701 1 _aKalygina
_bV. M.
701 1 _aKosintsev
_bV. I.
_cChemical Engineer
_cconsulting professor, Doctor of technical sciences
_f1939-
_gVictor Ivanovich
_xTPU
_2stltpush
_3(RuTPU)RU\TPU\pers\31066
701 1 _aGaman
_bV. I.
701 1 _aModebadze
_bO. E.
701 1 _aNikolaev
_bA. I.
801 1 _aRU
_b63413507
_c20110727
801 2 _aRU
_b63413507
_c20130926
_gRCR
942 _cBK