000			02010nam1a2200265 4500
001			599613
005			20231030033832.0
035			_a(RuTPU)RU\TPU\tpu\23717
035			_aRU\TPU\tpu\23614
090			_a599613
100			_a20130926a1988 k y0engy50 ba
101	1		_aeng
102			_aUS
200	1		_aPolaron jump conductivity in films of vitreous oxide semiconductors in an intense DC magnetic field _fV. I. Kosintsev, V. I. Koltun
320			_aReferences: p. 1042 (17 tit.)
330			_aExperimental data on the field dependence of static conductivity of vitreous oxide semiconductors (VOS) based on V 2O 5 are analyzed. To describe the effects of an intense electric field a model is proposed which assumes localization of small radius polarons (SRP) by the Coulomb field of positively charged defect centers (the bound SRP model). Within the framework of this model an expression is obtained which defines the flux density of charge carriers (J) in an electric field of arbitrary intensity (F), which in the limit of an intense electric field leads to a linear dependence of ln J on F 1/2. With the parameters found for the model the calculated function J(F) agrees well with experimental dependences of current upon F for VOS films in the vanadium-borate system. The most probable nature of defect centers in the given materials is anion (oxygen) vacancies. The results obtained agree with a previous analysis of field dependence of low-frequency dielectric permittivity also based on the bound SRP model
333			_aВ фонде НТБ ТПУ отсутствует
461			_tSoviet Physics Journal _d1965-1992
463			_tVol. 31, № 12 _vP. 1038-1042 _d1988
610	1		_aтруды учёных ТПУ
700		1	_aKosintsev _bV. I. _cChemical Engineer _cconsulting professor, Doctor of technical sciences _f1939- _gVictor Ivanovich _xTPU _2stltpush _3(RuTPU)RU\TPU\pers\31066
701		1	_aKoltun _bV. I.
801		1	_aRU _b63413507 _c20110727
801		2	_aRU _b63413507 _c20130926 _gRCR
942			_cBK