| 000 | 01630nam1a2200277 4500 | ||
|---|---|---|---|
| 001 | 599615 | ||
| 005 | 20231030033832.0 | ||
| 035 | _a(RuTPU)RU\TPU\tpu\23719 | ||
| 035 | _aRU\TPU\tpu\23718 | ||
| 090 | _a599615 | ||
| 100 | _a20130926a1977 k y0engy50 ba | ||
| 101 | 1 | _aeng | |
| 102 | _aUS | ||
| 200 | 1 |
_aThermostimulated current of dielectric relaxation in metal-vanadium phosphate glass-metal systems _fÉ. F. Ryannel', V. I. Gaman, V. I. Kosintsev |
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| 320 | _aReferences: p. 219 (6 tit.) | ||
| 330 | _aThe nature of the maxima of the thermostimulated current of dielectric relaxation in the thinfilm system metal-vanadium phosphate glass-metal is discussed. The experimental data is analyzed, taking into account the presence of a blocking barrier layer at the metalglass interface and allowing for the fact that the charge carriers in the glass have an activated mobility. The mobility of the charge carriers and their activation energy as well as the energetic position of the impurity levels and their concentration are determined from the curves of the temperature dependence of relaxation current | ||
| 333 | _aВ фонде НТБ ТПУ отсутствует | ||
| 461 |
_tSoviet Physics Journal _d1965-1992 |
||
| 463 |
_tVol. 20, № 2 _vP. 213-219 _d1977 |
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| 610 | 1 | _aтруды учёных ТПУ | |
| 700 | 1 |
_aRyannel' _bÉ. F. |
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| 701 | 1 |
_aGaman _bV. I. |
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| 701 | 1 |
_aKosintsev _bV. I. _cChemical Engineer _cconsulting professor, Doctor of technical sciences _f1939- _gVictor Ivanovich _xTPU _2stltpush _3(RuTPU)RU\TPU\pers\31066 |
|
| 801 | 1 |
_aRU _b63413507 _c20110727 |
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| 801 | 2 |
_aRU _b63413507 _c20130926 _gRCR |
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| 942 | _cBK | ||