000			02034nam1a2200277 4500
001			599617
005			20231030033832.0
035			_a(RuTPU)RU\TPU\tpu\23721
035			_aRU\TPU\tpu\23717
090			_a599617
100			_a20130926a1987 k y0engy50 ba
101	1		_aeng
102			_aUS
200	1		_aElectronic processes in oxide glassy semiconductors and thin-film structures based on them _fV. I. Gaman, V. I. Kosintsev, V. M. Kalygina
320			_aReferences: p. 473-474 (61 tit.)
330			_aThe physical nature of electronic processes in oxide glassy semiconductors (OGS) based on V 2O 5 is discussed on the basis of the theory of the small radius polaron (SRP). The most important parameters of the process of charge transfer by polarons are determined from an analysis of the temperature dependence of the static conductivity by mathematical modeling employing general theoretical expressions. A model of coupled SRP, presuming that they are localized by the Coulomb field of the charged defect centers, is proposed for describing the complex of data on the effects of a strong electric field and dielectric relaxation. On the basis of the model expressions describing the dependence of the current density and dielectric constant on the dc electric field strength and also a relation determining the dielectric relaxation time for the given model are obtained. The results of studies of the electric properties of OGS, modified by additions of a second transition-metal oxide, are discussed also
333			_aВ фонде НТБ ТПУ отсутствует
461			_tSoviet Physics Journal _d1965-1992
463			_tVol. 30, № 6 _vP. 461-474 _d1987
610	1		_aтруды учёных ТПУ
700		1	_aGaman _bV. I.
701		1	_aKosintsev _bV. I. _cChemical Engineer _cconsulting professor, Doctor of technical sciences _f1939- _gVictor Ivanovich _xTPU _2stltpush _3(RuTPU)RU\TPU\pers\31066
701		1	_aKalygina _bV. M.
801		1	_aRU _b63413507 _c20110727
801		2	_aRU _b63413507 _c20130926 _gRCR
942			_cBK