000			02032nam1a2200277 4500
001			599619
005			20231030033833.0
035			_a(RuTPU)RU\TPU\tpu\23723
035			_aRU\TPU\tpu\23377
090			_a599619
100			_a20130927a1986 k y0engy50 ba
101	1		_aeng
102			_aUS
200	1		_aPolarization processes in vitreous oxide semiconductors of the bi//2o//3-v//2o//5-cao system _fV. M. Kalygina [et. al.]
330			_aThis report discusses the temperature and frequency dependences of the conductivity and dielectric constant of vitreous oxide semiconductors (VOS) with the aim of refining the transport mechanism of the charge carriers in them. The dc ( sigma // minus ) and ac ( sigma approximately) conductivity and dielectric constant ( epsilon prime ) were measured for specimens of a capacitor type with sputtered Nichrome electrodes. The dielectric constant and the conductivity in the region of (2 multiplied by (times) 10**2-2 multiplied by (times) 10**4) Hz were determined by a bridge method using an E8-2. At frequencies of (1. 5-3) multiplied by (times) 10**9 Hz the measurements of epsilon prime were carried out using a resonator method. It is found that in view of the ac transport mechanism of charge carriers in vitreous oxide semiconductors, it is necessary to take into account both the hopping and tunnel transitions of the SRP (Small Radius Polarons). The polarization process of the Debye type observed in VOS in the low
333			_aВ фонде НТБ ТПУ отсутствует
461			_tThe Soviet journal of glass physics and chemistry
463			_tVol. 12, № 1 _vP. 54-58 _d1986
610	1		_aтруды учёных ТПУ
701		1	_aKalygina _bV. M.
701		1	_aGaman _bV. I.
701		1	_aKosintsev _bV. I. _cChemical Engineer _cconsulting professor, Doctor of technical sciences _f1939- _gVictor Ivanovich _xTPU _2stltpush _3(RuTPU)RU\TPU\pers\31066
701		1	_aModebadze _bO. E.
801		1	_aRU _b63413507 _c20110727
801		2	_aRU _b63413507 _c20130927 _gRCR
942			_cBK