| 000 | 03443naa2a2200469 4500 | ||
|---|---|---|---|
| 001 | 625368 | ||
| 005 | 20231030035518.0 | ||
| 035 | _a(RuTPU)RU\TPU\conf\24628 | ||
| 035 | _aRU\TPU\conf\24623 | ||
| 090 | _a625368 | ||
| 100 | _a20171212d2017 k y0rusy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aRU | ||
| 105 | _ay z 101zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aFabrication of 2D based pn junctions with improved performance by selective laser annealing _fMa Bing [et al.] |
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| 203 |
_aТекст _cэлектронный |
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| 225 | 1 | _aОптические технологии | |
| 230 | _a1 компьютерный файл (pdf; 342 Kb) | ||
| 300 | _aЗаглавие с титульного экрана | ||
| 320 | _a[Библиогр.: с. 125 (1 назв.)] | ||
| 330 | _aThere is a growing body of research on transistors based on nanomaterials such as 2D transition metal dichalcogenides (TMDs) (WS2, MoS2, etc.) and carbon nanotubes (CNTs). Here we co-deposited MoS2 and WS2 as PN junctions. The deposition could be performed on a PCB (printed circuit board) with Cu electrodes. The current-voltage characteristics were obtained using an Arduino board. The effect of laser irradiation could be investigated by studying the IV curves and light sensitivity for the same kind of devices in which one of the Cu electrodes was modified by a laser. The IV curves from the devices with and without laser treatment could be compared to quantify the changes in performance. | ||
| 463 | 1 |
_0(RuTPU)RU\TPU\conf\24481 _tВысокие технологии в современной науке и технике (ВТСНТ-2017) _oсборник научных трудов VI Международной научно-технической конференции молодых ученых, аспирантов и студентов, г. Томск, 27–29 ноября 2017 г. _fНациональный исследовательский Томский политехнический университет (ТПУ) ; под ред. А. Н. Яковлева _v[С. 125] _d2017 |
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| 610 | 1 | _aэлектронные ресурсы | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aлазерный отжиг | |
| 610 | 1 | _a2D | |
| 610 | 1 | _aсоединения | |
| 610 | 1 | _aпроизводительность | |
| 610 | 1 | _aнаноматериалы | |
| 610 | 1 | _aвольт-амперные характеристики | |
| 701 | 0 | _aMa Bing | |
| 701 | 1 |
_aRodriguez (Rodriges) Contreras _bR. D. _cVenezuelan physicist, doctor of science _cProfessor of Tomsk Polytechnic University _f1982- _gRaul David _2stltpush _3(RuTPU)RU\TPU\pers\39942 |
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| 701 | 1 |
_aLipovka _bA. A. _cspecialist in the field of organization of higher vocational education _cengineer of Tomsk Polytechnic University _f1993- _gAnna Anatolyevna _2stltpush _3(RuTPU)RU\TPU\pers\44078 |
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| 701 | 1 |
_aNekrasova _bT. |
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| 701 | 1 |
_aMurastov _bG. V. _cSpecialist in the field of lightning engineering _cAssistant of the Department of Tomsk Polytechnic University _f1989- _gGennadiy Viktorovich _2stltpush _3(RuTPU)RU\TPU\pers\37695 |
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| 701 | 1 |
_aNozdrina _bO. V. _cspecialist in the field of lightning engineering _cengineer of Tomsk Polytechnic University _f1990- _gOlga Vladimirovna _2stltpush _3(RuTPU)RU\TPU\pers\44784 |
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| 801 | 2 |
_aRU _b63413507 _c20191016 _gRCR |
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| 856 | 4 | _uhttp://earchive.tpu.ru/handle/11683/45505 | |
| 942 | _cBK | ||