| 000 | 02041nlm1a2200445 4500 | ||
|---|---|---|---|
| 001 | 636812 | ||
| 005 | 20231030040146.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\868 | ||
| 090 | _a636812 | ||
| 100 | _a20140327a1995 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aParametric x radiation from thick crystals _fI. Endo [et al.] |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[References: 16 tit.] | ||
| 330 | _aThe parametric x radiation from thick Si single crystals with 0.5–5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin’s prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)] | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tPhysical Review E _oScientific Journal |
||
| 463 |
_tVol. 51, Iss. 6 _v[P. 6305- 6308] _d1995 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aEndo _bI. |
|
| 701 | 1 |
_aHarada _bM. |
|
| 701 | 1 |
_aKobayashi _bT. |
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| 701 | 1 |
_aLee _bY. S. |
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| 701 | 1 |
_aOhgaki _bT. |
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| 701 | 1 |
_aTakahashi _bT. |
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| 701 | 1 |
_aMuto _bM. |
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| 701 | 1 |
_aYoshida _bK. |
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| 701 | 1 |
_aNitta _bH. |
|
| 701 | 1 |
_aOhba _bТ. |
|
| 701 | 1 |
_aZabaev _bV. N. _cphysicist _cassociate professor of Tomsk Polytechnic University _f1946- _gViktor Nikolaevich _2stltpush _3(RuTPU)RU\TPU\pers\31534 |
|
| 701 | 1 |
_aPotylitsyn _bA. P. _cRussian physicist _cProfessor of the TPU _f1945- _gAlexander Petrovich _2stltpush _3(RuTPU)RU\TPU\pers\26306 |
|
| 801 | 2 |
_aRU _b63413507 _c20180316 _gRCR |
|
| 856 | 4 | _uhttp://dx.doi.org/10.1103/PhysRevE.51.6305 | |
| 942 | _cCF | ||