| 000 | 02887nlm0a2200373 4500 | ||
|---|---|---|---|
| 001 | 636856 | ||
| 005 | 20231030040148.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\915 | ||
| 090 | _a636856 | ||
| 100 | _a20140404a2003 k y0rusy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 105 | _aa z 101zy | ||
| 135 | _adrnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aHigh Pulse Repetition Rate Metal and Metal Halide Vapor Lasers _fG. S. Evtushenko [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 64-65 (28 tit.)] | ||
| 330 | _aIn the paper, we show the present state of the art of high pulse repetition frequency (PRF) metal vapor lasers (MVL"s) and metal halide vapor lasers (MHVL"s) development. We also analyze underlying physical features, which limit optimum and maximum PRF of the above lasers and mention the results of the experimental study of high PRF CuBr and PbBr2 vapor lasers. By use of a powerful tasitron as a switch and a small hydrogen additive to the buffer gas Ne we obtained the output power of a practical use with PRF more than 200 kHz. Given PRF 250 kHz and a laser tube of diameter 2.5 cm and length 76 cm, we have got the output power 1.5 W. For PRF 200 kHz and 100 kHz, the output power 3 W and 10.5 W has been got respectively without gas flow across the discharge tube. Experimental and numerical modeling data evidence that the small H2 (or Cs) additives improve the frequency and output features of MVL"s and MHVL"s | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 463 |
_tXIV International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, November 10, 2003, Wroclaw, Poland _oProc. SPIE 5120 _v[P. 60-65] _d2003 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aEvtushenko _bG. S. _cDoctor of Technical Sciences, Professor of Tomsk Polytechnic University (TPU) _cRussian specialist in electrophysics _f1947- _gGennady Sergeevich _2stltpush _3(RuTPU)RU\TPU\pers\29009 |
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| 701 | 1 |
_aShiyanov _bD. V. _cspecialist in the field of electronics _cEngineer of Tomsk Polytechnic University _f1973- _gDmitry Valeryevich _2stltpush _3(RuTPU)RU\TPU\pers\31659 |
|
| 701 | 1 |
_aShestakov _bD. Yu. |
|
| 701 | 1 |
_aSukhanov _bV. B. _cspecialist in the field of electronics _cEngineer of Tomsk Polytechnic University _f1945- _gViktor Borisovich _2stltpush _3(RuTPU)RU\TPU\pers\31658 |
|
| 701 | 1 |
_aFedorov _bV. F. |
|
| 701 | 1 |
_aZhdaneev _bO. V. _cspecialist in the field of electronics _cAssistant of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1978- _gOleg Valeryevich _2stltpush _3(RuTPU)RU\TPU\pers\32101 |
|
| 801 | 2 |
_aRU _b63413507 _c20180316 _gRCR |
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| 856 | 4 | _uhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=766173 | |
| 942 | _cCF | ||