| 000 | 04098nlm1a2200433 4500 | ||
|---|---|---|---|
| 001 | 637364 | ||
| 005 | 20231030040207.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\1481 | ||
| 035 | _aRU\TPU\network\1480 | ||
| 090 | _a637364 | ||
| 100 | _a20140902a2012 k y0rusy50 ca | ||
| 101 | 0 | _aeng | |
| 102 | _aRU | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aThe Synthesis of Gallium Arsenide Films on Silicon Substrate by Ionics Ablation _fA. V. Kabyshev, F. V. Konusov, G. E. Remnev |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 330 | _aOptical, electrophysical and photoelectrical properties of arsenide gallium thin films deposited on the polycrystalline silicon by pulsed ions ablation with using of power ions bunch were investigated. The influence of the vacuum annealing at temperature 300-900 K and residual pressure 10 -2 Pa on the films characteristics of the surface and volume dark conduction and photoconduction was established. The optimal deposition and thermal vacuum treatment conditions at which the films properties changes are more stable to thermal and field excitation were determined. The deposited films don't subject on the characteristics to films produced by the other pulsed and epitaxy methods and surpass the films deposited on dielectrics. The analysis of properties confirms a presence in the films as soon as crystal and the amorphous components. The predominant factor in the films properties forming is a defects formation, a defects clusterization and a change in the distribution of the nanocrystals. A films deposited in the center of plasma flame possesses an optimal properties. The silicon substrate effect reflects on films characteristics until and after their annealing. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tИзвестия вузов. Физика _oнаучный журнал _d1957- |
||
| 463 |
_tТ. 55, № 12-2 _v[С. 128-132] _d2012 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aарсенид галлия | |
| 610 | 1 | _aкремний | |
| 610 | 1 | _aсветочувствительность | |
| 610 | 1 | _aрадиационные дефекты | |
| 610 | 1 | _aотжиг | |
| 700 | 1 |
_aKabyshev _bA. V. _cspecialist in the field of electric power engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1958- _gAlexander Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\32572 |
|
| 701 | 1 |
_aKonusov _bF. V. _cphysicist _cSenior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1958- _gFedor Valerievich _2stltpush _3(RuTPU)RU\TPU\pers\32570 |
|
| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bЭнергетический институт (ЭНИН) _bКафедра электроснабжения промышленных предприятий (ЭПП) _h186 _2stltpush _3(RuTPU)RU\TPU\col\18676 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bЛаборатория № 1 _h6378 _2stltpush _3(RuTPU)RU\TPU\col\19035 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра водородной энергетики и плазменных технологий (ВЭПТ) _h2048 _2stltpush _3(RuTPU)RU\TPU\col\18735 |
| 801 | 2 |
_aRU _b63413507 _c20150624 _gRCR |
|
| 856 | 4 | _uhttp://elibrary.ru/item.asp?id=20133326 | |
| 942 | _cCF | ||