| 000 | 04345nlm1a2200457 4500 | ||
|---|---|---|---|
| 001 | 637365 | ||
| 005 | 20231030040207.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\1482 | ||
| 035 | _aRU\TPU\network\1481 | ||
| 090 | _a637365 | ||
| 100 | _a20140902a2012 k y0rusy50 ca | ||
| 101 | 0 | _aeng | |
| 102 | _aRU | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aHigh Intensive Short Pulsed Ions Implantation Effect on Electrical and Photoelectrical Properties of Polycrystalline Silicon _fA. V. Kabyshev, F. V. Konusov, G. E. Remnev |
|
| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[Ref.: p. 61 (24 tit.)] | ||
| 330 | _aThe electrical and photoelectrical properties of the polycrystalline silicon after high intensive short pulsed implantation of carbon ions were investigated. A vacuum annealing effect under the pressure of 10 -2 Pa and temperature of 3001200 K on the characteristics of the surface dark conduction and photoconduction was determined. We determined the optimal conditions of thermal treatment during which we achieved changes in the properties more stable to thermal and field excitation. The implantation affects the silicon properties owing to accumulation of the radiation damage and the formation of the inclusions of new nanosized phases. The influence of the induced structural-phases inhomogeneities on the properties is determined by the dose of the incorporated ions and annealing conditions. The type of the conduction changes depending on concentration of the defects. The change in properties after annealing obeys to the regularities which are proper for the ion-heat modification of materials. After annealing in the temperature interval of 300-700 K the alternations in the characteristics are stipulated by dissociation of the donor defect complexes. The nanocrystals sintered at 700-1000 K and their size growth stably affect the characteristics. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tИзвестия вузов. Физика _oнаучный журнал _d1957- |
||
| 463 |
_tТ. 55, № 12-3 _v[С. 58-61] _d2012 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aполикристаллический кремний | |
| 610 | 1 | _aионы | |
| 610 | 1 | _aимплантация | |
| 610 | 1 | _aсветочувствительность | |
| 610 | 1 | _aрадиационные дефекты | |
| 610 | 1 | _aвакуумный отжиг | |
| 700 | 1 |
_aKabyshev _bA. V. _cspecialist in the field of electric power engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1958- _gAlexander Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\32572 |
|
| 701 | 1 |
_aKonusov _bF. V. _cphysicist _cSenior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1958- _gFedor Valerievich _2stltpush _3(RuTPU)RU\TPU\pers\32570 |
|
| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bЭнергетический институт (ЭНИН) _bКафедра электроснабжения промышленных предприятий (ЭПП) _h186 _2stltpush _3(RuTPU)RU\TPU\col\18676 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bЛаборатория № 1 _h6378 _2stltpush _3(RuTPU)RU\TPU\col\19035 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра водородной энергетики и плазменных технологий (ВЭПТ) _h2048 _2stltpush _3(RuTPU)RU\TPU\col\18735 |
| 801 | 2 |
_aRU _b63413507 _c20150624 _gRCR |
|
| 856 | 4 | _uhttp://elibrary.ru/item.asp?id=19015552 | |
| 942 | _cCF | ||