| 000 | 03869nlm1a2200433 4500 | ||
|---|---|---|---|
| 001 | 637371 | ||
| 005 | 20231030040208.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\1488 | ||
| 035 | _aRU\TPU\network\1478 | ||
| 090 | _a637371 | ||
| 100 | _a20140903a2014 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aRU | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aThermal and chemical passivation of gallium-arsenide films deposited from ablation plasma _fA. V. Kabyshev, F. V. Konusov, G. E. Remnev |
|
| 203 |
_aText _celectronic |
||
| 300 | _aTitle screen | ||
| 320 | _a[Ref.: p. 163 (30 tit.)] | ||
| 330 | _aThe electric and photoelectric properties of gallium-arsenide films deposited on a polycrystalline corundum substrate from the ablation plasma formed by a high-power ion beam are investigated. It is ascertained that vacuum and air annealing (in the former case, P = 10?2 Pa and T = 300–1200 K) and sulfide chemical passivation in an alcoholic solution affect the characteristics of the dark conductivity and photo-conductivity of the film surfaces. The optimal conditions for thermal and chemical treatment, at which the most stable changes in film the properties are attained, are determined. Enhancement in the stability of the electrical and photoelectric characteristics of films, which is achieved after thermal treatment, arises from the annealing of defects and their clusterization. Sulfide passivation leads to changes in the characteristics and increases the stability of properties under air oxidation. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tJournal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques _oScientific Journal |
||
| 463 |
_tVol. 8, iss. 1 _v[P. 158-163] _d2014 |
||
| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 610 | 1 | _aпассивация | |
| 610 | 1 | _aпленки | |
| 610 | 1 | _aарсенид галлия | |
| 610 | 1 | _aабляционная плазма | |
| 700 | 1 |
_aKabyshev _bA. V. _cspecialist in the field of electric power engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1958- _gAlexander Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\32572 |
|
| 701 | 1 |
_aKonusov _bF. V. _cphysicist _cSenior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1958- _gFedor Valerievich _2stltpush _3(RuTPU)RU\TPU\pers\32570 |
|
| 701 | 1 |
_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bЭнергетический институт (ЭНИН) _bКафедра электроснабжения промышленных предприятий (ЭПП) _h186 _2stltpush _3(RuTPU)RU\TPU\col\18676 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bЛаборатория № 1 _h6378 _2stltpush _3(RuTPU)RU\TPU\col\19035 |
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bФизико-технический институт (ФТИ) _bКафедра водородной энергетики и плазменных технологий (ВЭПТ) _h2048 _2stltpush _3(RuTPU)RU\TPU\col\18735 |
| 801 | 2 |
_aRU _b63413507 _c20150624 _gRCR |
|
| 856 | 4 | _uhttp://link.springer.com/article/10.1134%2FS1027451014010285 | |
| 942 | _cCF | ||