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_aOptical properties and urbach rule of GaAs films deposited on polycor by pulsed ion ablation _fA. V. Kabyshev [et al.] |
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_aText _celectronic |
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| 320 | _a[Ref.: p. 570 (20 tit.)] | ||
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_t10th International Conference on Modification of materials with Particle Beams and Plasma Flows, Tomsk, September 19-24, 2010 _oproceedings _fInstitute of High Current Electronics _v[P. 567-570] _d2010 |
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_aKabyshev _bA. V. _cspecialist in the field of electric power engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1958- _gAlexander Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\32572 |
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_aKonusov _bF. V. _cphysicist _cSenior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1958- _gFedor Valerievich _2stltpush _3(RuTPU)RU\TPU\pers\32570 |
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_aLozhnikov _bS. N. |
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_aRemnev _bG. E. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of technical sciences _f1948- _gGennady Efimovich _2stltpush _3(RuTPU)RU\TPU\pers\31500 |
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_aSaltimakov _bM. S. |
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| 856 | 4 | _uhttp://www.hcei.tsc.ru/conf/2010/cat/proc_2010/cmm/567-570.pdf | |
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