| 000 | 02932nlm0a2200349 4500 | ||
|---|---|---|---|
| 001 | 637427 | ||
| 005 | 20231030040209.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\1552 | ||
| 035 | _aRU\TPU\network\370 | ||
| 090 | _a637427 | ||
| 100 | _a20140912a2005 k y0engy50 ba | ||
| 101 | 0 |
_aeng _deng |
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| 102 | _aRU | ||
| 105 | _aa z 101zy | ||
| 135 | _adrcn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aGas medium effect on electrophysical properties of alumina irradiated with titanium ions _fA. V. Kabyshev, F. V. Konusov, N. V. Krivosheeva |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p.180 (7 tit.)] | ||
| 330 | _aIon-heat modification allow to adjust the surface conductivity of inorganic dielectrics from σ=10-15 S to 10-4 S. The surface electrophysical and optical properties are stable after annealing in vacuum and in rare gases but they change in oxygen-contained mediums owing to interaction between defects and atmospheric oxygen. Energetic and kinetic characteristics of conduction, photoconduction, transport charge mechanisms and its stability after irradiation of the polycrystalline aluminium oxide with titaniumions (Φ=107 cm-2, E1=100 keV) and subsequent annealing in vacuum and in air (P=1-105 Pa, Tam=300-2000 K) were investigated. Induced defects and implanted ions accumulation and its integration into clusters and impurity-defects complexes, defects type transformation within complexes, defects charge exchange in clusters are determine the dependencies σ(Φ,Tam,T,t) in irradiated Al2O3after annealing in vacuum. Oxygen-contained complexes with different electronic level spectra and stability, substitutional defect clusters and stoichiometric composition of compounds produced by ion-heat modification are determine the properties stability at the heating in air. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 463 |
_tKORUS 2005 _oThe 9th Russian-Korean International Symposium on Science and Technology, 26th June - 2nd July 2005, Novosibirsk State Technical Universiry, Russia _fNovosibirsk State Technical University; Tomsk Polytechnic University (TPU) _v[P. 176 - 180] _d2005 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 700 | 1 |
_aKabyshev _bA. V. _cspecialist in the field of electric power engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1958- _gAlexander Vasilievich _2stltpush _3(RuTPU)RU\TPU\pers\32572 |
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| 701 | 1 |
_aKonusov _bF. V. _cphysicist _cSenior Researcher of Tomsk Polytechnic University, Candidate of physical and mathematical sciences _f1958- _gFedor Valerievich _2stltpush _3(RuTPU)RU\TPU\pers\32570 |
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| 701 | 1 |
_aKrivosheeva _bN. V. |
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| 801 | 2 |
_aRU _b63413507 _c20151212 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1109/KORUS.2005.1507677 | |
| 942 | _cCF | ||