| 000 | 02681nlm1a2200325 4500 | ||
|---|---|---|---|
| 001 | 637505 | ||
| 005 | 20231030040212.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\1657 | ||
| 090 | _a637505 | ||
| 100 | _a20140923a2011 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aInfluence of Cathode Diameter on the Operation of a Planar Diode with an Explosive Emission Cathode _fYu. I. Isakova, G. E. Kholodnaya, A. I. Pushkarev |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: 27 tit.] | ||
| 330 | _aThis paper presents the results of experimental investigations into the current-voltage characteristics of a planar diode with an explosive emission cathode made from graphite. Studies were performed using a TEU-500 pulsed electron accelerator (350–500keV, 100ns, 250J per pulse). Duration of diode operation, in a mode when electron current is limited by the emissive ability of the graphite cathode, is 15–20ns. The contribution of the cathode periphery to total electron current appears only as an increase in the emissive surface area due to an expansion of explosive plasma. Investigations of an ion diode with a graphite cathode (plane and focusing geometry) were also carried out. Experiments were performed using a TEMP-4M ion accelerator, which forms two nanosecond pulses: the first negative pulse (150–200kV, 300–600ns) followed by the second positive (250–300kV, 150ns). Total diode current in the first pulse is well described by the Child-Langmuir law for electron current at a constant rate of plasma expansion, equal to 1.3?cm/µs. It is shown that for an area of flat cathode over 25cm2, the influence of edge contribution does not exceed measurement error of total diode electron current (10%). | ||
| 461 |
_tAdvances in High Energy Physics _oScientific Journal |
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| 463 |
_tVol. 2011 _v[14 p.] _d2011 |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 700 | 1 |
_aIsakova _bYu. I. _cphysicist _cJunior researcher of Tomsk Polytechnic University _f1988- _gYulia Ivanovna _2stltpush _3(RuTPU)RU\TPU\pers\32700 |
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| 701 | 1 |
_aKholodnaya _bG. E. _celectrophysicist _cJunior researcher of Tomsk Polytechnic University, Senior Lecturer _f1986- _gGalina Evgenievna _2stltpush _3(RuTPU)RU\TPU\pers\32699 |
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| 701 | 1 |
_aPushkarev _bA. I. _cphysicist _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences, Senior researcher _f1954- _gAleksandr Ivanovich _2stltpush _3(RuTPU)RU\TPU\pers\32701 |
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| 801 | 2 |
_aRU _b63413507 _c20161222 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1155/2011/649828 | |
| 942 | _cCF | ||