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035 _a(RuTPU)RU\TPU\network\3439
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071 6 0 _adoi:10.1016/j.physleta.2014.03.041
090 _a639041
100 _a20150219a2014 k y0engy50 ba
101 0 _aeng
102 _aUS
135 _adrcn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aStudies of relativistic electron scattering at planar alignment in a thin Si crystal
_fY. Takabayashi, Yu. L. Pivovarov, T. A. Tukhfatullin
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: p. 1525 (33 tit.)]
330 _aExperiments on 255-MeV electron scattering under (220) planar channeling conditions in a Si crystal were carried out at the linac of the SAGA Light Source. The spatial and angular distributions of electrons penetrating through a 20-µm thick Si crystal at different incident angles with respect to the (220) plane were measured, and features characteristic of the planar alignment were identified. The experimental results were compared with computer simulations, and showed a reasonable agreement. A comparison with doughnut scattering at axial channeling in the same crystal was also performed. It was confirmed that the planar alignment effect is weaker than the axial alignment effect. These studies are important for understanding the basic mechanism of electron scattering and radiation processes in a crystal.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tPhysics Letters A
_oScientific Journal
463 _tVol. 378, iss. 21
_v[P. 1520–1525]
_d2014
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
700 1 _aTakabayashi
_bY.
701 1 _aPivovarov
_bYu. L.
_cphysicist
_cprofessor of Tomsk Polytechnic University
_f1953-
_gYuriy Leonidovich
_2stltpush
_3(RuTPU)RU\TPU\pers\31522
701 1 _aTukhfatullin
_bT. A.
_cphysicist
_cAssociate Professor of Tomsk Polytechnic University, Candidate of physical and mathematical sciences
_f1971-
_gTimur Ahatovich
_2stltpush
_3(RuTPU)RU\TPU\pers\33633
801 2 _aRU
_b63413507
_c20150221
_gRCR
856 4 _uhttp://www.sciencedirect.com/science/article/pii/S0375960114002989
942 _cCF