| 000 | 03251nlm1a2200397 4500 | ||
|---|---|---|---|
| 001 | 639430 | ||
| 005 | 20231030040319.0 | ||
| 035 | _a(RuTPU)RU\TPU\network\3916 | ||
| 090 | _a639430 | ||
| 100 | _a20150311a2013 k y0engy50 ba | ||
| 101 | 0 | _aeng | |
| 102 | _aUS | ||
| 135 | _adrnn ---uucaa | ||
| 181 | 0 | _ai | |
| 182 | 0 | _ab | |
| 200 | 1 |
_aLuminescence of thin-film light-emitting diode structures upon excitation by a high-current electron beam _dЛюминесценция тонкопленочных светодиодных структур при возбуждении сильноточным электронным пучком _fV. I. Oleshko [et al.] |
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| 203 |
_aText _celectronic |
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| 300 | _aTitle screen | ||
| 320 | _a[References: p. 66 (9 tit.)] | ||
| 330 | _aThe possibility is examined of applying strong electron beams for luminescence control of InGaN/GaN lightemitting-diode heterostructures deposited on a sapphire substrate. It is shown that excitation of the samples by an electron beam from the heterostructure side leads to intense luminescence of the GaN and InGaN epitaxial layers, whose characteristics are determined by the prehistory of the samples. Induced emission is detected, arising in separate light-emitting-diode structures when the energy density of the electron beam reaches a threshold value. Transition to the induced emission regime in InGaN quantum wells is accompanied by the appearance of a luminous halo around the excitation zone. | ||
| 333 | _aРежим доступа: по договору с организацией-держателем ресурса | ||
| 461 |
_tRussian Physics Journal _oScientific Journal |
||
| 463 |
_tVol. 56, iss. 1 _v[P. 62-66] _d2013 |
||
| 510 | 1 |
_aЛюминесценция тонкопленочных светодиодных структур при возбуждении сильноточным электронным пучком _zrus |
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| 610 | 1 | _aэлектронный ресурс | |
| 610 | 1 | _aтруды учёных ТПУ | |
| 701 | 1 |
_aOleshko _bV. I. _cspecialist in the field of lightning engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1948- _gVladimir Ivanovich _2stltpush _3(RuTPU)RU\TPU\pers\33783 |
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| 701 | 1 |
_aGorina _bS. G. |
|
| 701 | 1 |
_aKorepanov _bV. I. _cspecialist in the field of lightning engineering _cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences _f1947- _gVladimir Ivanovich _2stltpush _3(RuTPU)RU\TPU\pers\33774 |
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| 701 | 1 |
_aLisitsyn _bV. M. _cProfessor of Tomsk Politechnic University, candidate of physical and mathematical sciences _cRussian physicist _f1939- _gViktor Mikhailovich _2stltpush _3(RuTPU)RU\TPU\pers\28330 |
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| 701 | 1 |
_aPrudaev _bI. A. |
|
| 701 | 1 |
_aTolbanov _bO. P. |
|
| 712 | 0 | 2 |
_aНациональный исследовательский Томский политехнический университет (ТПУ) _bИнститут физики высоких технологий (ИФВТ) _bКафедра лазерной и световой техники (ЛиСТ) _h65 _2stltpush _3(RuTPU)RU\TPU\col\18690 |
| 801 | 2 |
_aRU _b63413507 _c20180305 _gRCR |
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| 856 | 4 | _uhttp://dx.doi.org/10.1007/s11182-013-9995-6 | |
| 942 | _cCF | ||