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100 _a20150318a2013 k y0engy50 ba
101 0 _aeng
102 _aUS
135 _adrnn ---uucaa
181 0 _ai
182 0 _ab
200 1 _aThree types of self-activated luminescence centers in CdS:O
_fN. K. Morozova [et al.]
203 _aText
_celectronic
300 _aTitle screen
320 _a[References: p. 1666 (16 tit.)]
330 _aThe cathodoluminescence and X-ray-luminescence spectra of CdS:O crystals are studied. For these CdS:O crystals the oxygen content, the dependence of the band gap on the substitutional oxygen content [OS], and the band model calculated on the basis of band anticrossing theory are known. New data on the three types of self-activated luminescence, specifically, edge luminescence and luminescence related to SA and F + centers in CdS are obtained. The conditions of the formation of these luminescence centers under changes in the system of intrinsic point defects in CdS crystals containing oxygen are established.
333 _aРежим доступа: по договору с организацией-держателем ресурса
461 _tSemiconductors
463 _tVol. 47, iss. 13
_v[P. 1661-1666]
_d2013
610 1 _aэлектронный ресурс
610 1 _aтруды учёных ТПУ
701 1 _aMorozova
_bN. K.
701 1 _aDanilevich
_bN. D.
701 1 _aOleshko
_bV. I.
_cspecialist in the field of lightning engineering
_cProfessor of Tomsk Polytechnic University, Doctor of physical and mathematical sciences
_f1948-
_gVladimir Ivanovich
_2stltpush
_3(RuTPU)RU\TPU\pers\33783
701 1 _aVil'chinskaya (Vilchinskaya)
_bS. S.
_cspecialist in the field of laser and light technology
_cassociate Professor of Tomsk Polytechnic University, candidate of physico-mathematical Sciences
_f1976-
_gSvetlana Sergeevna
_2stltpush
_3(RuTPU)RU\TPU\pers\33905
712 0 2 _aНациональный исследовательский Томский политехнический университет (ТПУ)
_bИнститут физики высоких технологий (ИФВТ)
_bКафедра лазерной и световой техники (ЛиСТ)
_h65
_2stltpush
_3(RuTPU)RU\TPU\col\18690
801 2 _aRU
_b63413507
_c20150318
_gRCR
856 4 _uhttp://dx.doi.org/10.1134/S1063782613130125
942 _cCF